Datasheet > ST13003B

ST13003B

更新时间： 2024-09-23 23:34:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
7页	72K
描述
TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 1.5A I(C) \| SOT-32

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中文翻译

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数据手册

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ST13003B 数据手册

ST13003

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

MEDIUM VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

APPLICATIONS:

■

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

■

SWITCH MODE POWER SUPPLIES

DESCRIPTION

SOT-32

The device is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is designed for use in lighting

applications and low cost switch-mode power

supplies.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

Parameter

Value

700

Unit

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

V_CEO

400

V_EBO

Emitter-Base Voltage

BV_EBO

(I_C= 0, I_B= 0.75 A, t_p< 10µs, T_j< 150^oC)

I_C

I_CM

I_B

Collector Current

1.5

Collector Peak Current (t_p< 5 ms)

Base Current

0.75

1.5

I_BM

P_tot

T_stg

T_j

Base Peak Current (t_p< 5 ms)

Total Dissipation at T_c= 25 ^oC

Storage Temperature

^oC

-65 to 150

150

Max. Operating Junction Temperature

1/7

August 2001

12 3 4 5 6 7

中文翻译

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