Datasheet > SSTS30120CTF

SSTS30120CTF

更新时间： 2024-11-10 01:18:31

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新硅能 - SILIKRON		/
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6页	328K
描述
High Junction Temperature

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数据手册

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SSTS30120CTF 数据手册

SSTS30120CT/CTF

Main Product Characteristics:

2×15A

120V

VRRM

150℃

0.85V

T(max)

Vf(max)

TO220

TO220F

SSTS30120CTF

Schematic Diagram

SSTS30120CT

Features and Benefits:

High Junction Temperature

High ESD Protection

High Forward & Reverse Surge capability

Description:

Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC

convertors; this product special design for high forward and reverse surge capability

Absolute Rating:

Symbol

Characterizes

Value

120

Unit

V_RRM

Peak Repetitive Reverse Voltage

V_R(RMS)

RMS Reverse Voltage

Per diode

I_F(AV)

Average Forward Current

Per device

I_FSM

I_RRM

T_J

Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)

Peak Repetitive Reverse Surge Current(Tp=2us)

Maximum operation Junction Temperature Range

Storage Temperature Range

200

0.5

-55~150

℃

T_stg

Thermal Resistance

Symbol

Characterizes

Maximum Thermal Resistance Junction To

Case(per leg)

Value

2.3

Unit

℃/W

R_θJC

TO220

TO220F

5.3

Electrical Characterizes @T_A=25℃ unless otherwise specified

Symbol

Characterizes

Min Typ Max Unit

Test Condition

I_R=0.5mA

V_R

Reverse Breakdown Voltage

120

0.85

0.7

0.1

I_F=15A, T_J=25℃

V_F

I_R

Forward Voltage Drop

Leakage Current

I_F=15A, T_J=125℃

V_R=120V, T_J=25℃

V_R=120V, T_J=125℃

©Silikron Semiconductor CO., LTD.

2011.5.26

www.silikron.com

Version: 2.0

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