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SST25VF080B-50-4I-S2AF-T

更新时间： 2024-09-18 15:52:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
32页 897K
描述
IC,SERIAL EEPROM,NOR FLASH,1MX8,CMOS,SOP,8PIN,PLASTIC

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中文翻译

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SST25VF080B-50-4I-S2AF-T 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SOP, SOP8,.3
Reach Compliance Code：compliantFactory Lead Time：9 weeks
风险等级：1.42最大时钟频率 (fCLK)：50 MHz
数据保留时间-最小值：100耐久性：100000 Write/Erase Cycles
JESD-30 代码：S-PDSO-G8JESD-609代码：e4
长度：5.275 mm内存密度：8388608 bit
内存集成电路类型：FLASH内存宽度：1
湿度敏感等级：1功能数量：1
端子数量：8字数：8388608 words
字数代码：8000000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：8MX1封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.3
封装形状：SQUARE封装形式：SMALL OUTLINE
并行/串行：SERIAL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3/3.3 V认证状态：Not Qualified
座面最大高度：2.16 mm串行总线类型：SPI
最大待机电流：0.00002 A子类别：Flash Memories
最大压摆率：0.03 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED类型：NOR TYPE
宽度：5.275 mm写保护：HARDWARE/SOFTWARE
Base Number Matches：1

SST25VF080B-50-4I-S2AF-T 数据手册

 浏览型号SST25VF080B-50-4I-S2AF-T的Datasheet PDF文件第2页浏览型号SST25VF080B-50-4I-S2AF-T的Datasheet PDF文件第3页浏览型号SST25VF080B-50-4I-S2AF-T的Datasheet PDF文件第4页浏览型号SST25VF080B-50-4I-S2AF-T的Datasheet PDF文件第5页浏览型号SST25VF080B-50-4I-S2AF-T的Datasheet PDF文件第6页浏览型号SST25VF080B-50-4I-S2AF-T的Datasheet PDF文件第7页 
SST25VF080B  
8 Mbit SPI Serial Flash  
• Packages Available  
Features  
- 8-lead SOIC (200 mils)  
- 8-contact WSON (6mm x 5mm)  
- 8-lead PDIP (300 mils)  
• Single Voltage Read and Write Operations  
- 2.7-3.6V  
• Serial Interface Architecture  
- SPI Compatible: Mode 0 and Mode 3  
• High Speed Clock Frequency  
- 50/66 MHz conditional (see Table 5-6)  
• Superior Reliability  
• All devices are RoHS compliant  
Product Description  
25 series Serial Flash family features a four-wire, SPI-  
compatible interface that allows for a low pin-count  
package which occupies less board space and ulti-  
mately lowers total system costs. The SST25VF080B  
devices are enhanced with improved operating fre-  
quency and lower power consumption. SST25VF080B  
SPI serial flash memories are manufactured with pro-  
prietary, high-performance CMOS SuperFlash technol-  
ogy. The split-gate cell design and thick-oxide tunneling  
injector attain better reliability and manufacturability  
compared with alternate approaches.  
- Endurance: 100,000 Cycles (typical)  
- Greater than 100 years Data Retention  
• Low Power Consumption:  
- Active Read Current: 10 mA (typical)  
- Standby Current: 5 µA (typical)  
• Flexible Erase Capability  
- Uniform 4 KByte sectors  
- Uniform 32 KByte overlay blocks  
- Uniform 64 KByte overlay blocks  
The SST25VF080B devices significantly improve per-  
formance and reliability, while lowering power con-  
sumption. The devices write (Program or Erase) with a  
single power supply of 2.7-3.6V for SST25VF080B.  
The total energy consumed is a function of the applied  
voltage, current, and time of application. Since for any  
given voltage range, the SuperFlash technology uses  
less current to program and has a shorter erase time,  
the total energy consumed during any Erase or Pro-  
gram operation is less than alternative flash memory  
technologies.  
• Fast Erase and Byte-Program:  
- Chip-Erase Time: 35 ms (typical)  
- Sector-/Block-Erase Time: 18 ms (typical)  
- Byte-Program Time: 7 µs (typical)  
• Auto Address Increment (AAI) Programming  
- Decrease total chip programming time over  
Byte-Program operations  
• End-of-Write Detection  
- Software polling the BUSY bit in Status Register  
- Busy Status readout on SO pin in AAI Mode  
The SST25VF080B device is offered in 8-lead SOIC  
(200 mils), 8-contact WSON (6mm x 5mm), and 8-lead  
PDIP (300 mils) packages. See Figure 2-1 for pin  
assignments.  
• Hold Pin (HOLD#)  
- Suspends a serial sequence to the memory  
without deselecting the device  
• Write Protection (WP#)  
- Enables/Disables the Lock-Down function of the  
status register  
• Software Write Protection  
- Write protection through Block-Protection bits in  
status register  
• Temperature Range  
- Commercial: 0°C to +70°C  
- Industrial: -40°C to +85°C  
2015 Microchip Technology Inc.  
DS20005045C-page 1  
 
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中文翻译

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SST25VF080B-50-4I-S2AF-T 替代型号

型号 品牌 替代类型 描述 数据表
SST25VF080B-50-4I-S2AF MICROCHIP

类似代替

 1M X 8 FLASH 2.7V PROM, PDSO8, 0.200 INCH, ROHS COMPLIANT, SOIC-8
SST25VF080B-80-4I-SAE-T MICROCHIP

类似代替

 IC,SERIAL EEPROM,NOR FLASH,1MX8,CMOS,SOP,8PIN,PLASTIC

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