生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.7 | Is Samacsys: | N |
配置: | SINGLE | 最小漏源击穿电压: | 550 V |
最大漏极电流 (Abs) (ID): | 2 A | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 42 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSR2N60 | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
SSR2N60 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o | |
SSR2N60A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
SSR2N60ATF | FAIRCHILD |
获取价格 |
暂无描述 | |
SSR2N60ATM | FAIRCHILD |
获取价格 |
暂无描述 | |
SSR2N60B | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
SSR2N60BTF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal | |
SSR2N60BTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal | |
SSR3 | ETC |
获取价格 |
ROSETTENKNOPF SELBSTMONTAGE M10 10ST | |
SSR3045CTG | SSDI |
获取价格 |
15 AMP per leg / 45 Volts LOW VOLTAGE DROP SCHOTTKY POWER DIODE COMMON CATHODE CENTERTAP |