Datasheet > SSR30C100S1_1

SSR30C100S1_1

更新时间： 2024-11-06 11:57:15

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描述
Schottky Silicon Carbide Rectifier

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数据手册

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SSR30C100S1_1 数据手册

SSR30C100S1

SSR30C120S1

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

30 A / 1200 V

Schottky Silicon Carbide

Rectifier

Designer’s Data Sheet

Part Number / Ordering Information ^1/

SSR30C __

__ __

Screening ^2/__ = Not Screened

TX = TX Level

│

└

│

└

FEATURES:

TXV = TXV

•

1200 Volt Silicon Carbide Schottky Rectifier

Average Output Current 30 Amps

No Reverse Recovery

No Forward Recovery

No Switching Time Change Over

Temperature

S = S Level

Package

S1 = SMD1

Voltage 100 = 1000 V

120 = 1200 V

•

Small Package Size

TX, TXV, and Space Level Screening

Available. ^2/Consult Factory.

MAXIMUM RATINGS ^3/

Symbol

Value

Units

Volts

SSR30C100S1

SSR30C120S1

V_RRM

V_R

1000

1200

Peak Repetitive and Peak Reverse Voltage

Average Rectified Forward Current ^4/

I_O

Amps

Total

(Resistive Load, 60 Hz, Sine Wave)

Peak Surge Current ^4/

I_FSM

Amps

180

(8.3 ms Pulse, Half Sine Wave, T_A= 25^oC)

Total

Operating & Storage Temperature

T_OP& T_stg

T_J

^oC

-55 to +250

Junction Temperature

Maximum Thermal Resistance ^4/

(Junction to Case)

R_θJC

^oC/W

0.8

Total

NOTES:

1/ For Ordering Information, Price, and Availability Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC

4/ Terminal Pads 1 & 3 Must be connected together for testing and at the Board Level.

SMD1

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: SH0043C

DOC

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