生命周期: | Active | 包装说明: | HERMETICALLY SEALED, CERPACK-2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.72 | 应用: | POWER |
配置: | COMMON CATHODE, 2 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | R-CSSO-G2 |
最大非重复峰值正向电流: | 250 A | 元件数量: | 2 |
相数: | 1 | 端子数量: | 2 |
最大输出电流: | 15 A | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 45 V |
表面贴装: | YES | 技术: | SCHOTTKY |
端子形式: | GULL WING | 端子位置: | SINGLE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSR3045CTGS | SSDI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, HERMETICALLY SEAL | |
SSR3045CTGTX | SSDI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, HERMETICALLY SEAL | |
SSR3045CTGTXV | SSDI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, HERMETICALLY SEAL | |
SSR3055 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Meta | |
SSR3055A | SAMSUNG |
获取价格 |
ADVANCED POWER MOSFET | |
SSR3055L | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-252 | |
SSR3055LA | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-252AA | |
SSR30C100S1 | SSDI |
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30 A / 1200 V Schottky Silicon Carbide Rectifier | |
SSR30C100S1_1 | SSDI |
获取价格 |
Schottky Silicon Carbide Rectifier | |
SSR30C100S1S | SSDI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon Carbide, SMD1, 3 |