Datasheet > SSM6N44FU

SSM6N44FU

更新时间： 2023-12-06 20:13:06

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	166K
描述
N-ch x 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-363(US6)

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SSM6N44FU 数据手册

SSM6N44FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N44FU

High Speed Switching Applications

Unit: mm

Analog Switching Applications

•

Compact package suitable for high-density mounting

Low ON-resistance : R

: R

= 4.0 Ω (max) (@V

= 7.0 Ω (max) (@V

= 4 V)

= 2.5 V)

DS(ON)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

DSS

Gate-Source voltage

±20

100

200

150

GSS

Drain current

Pulse

Drain power dissipation (Ta = 25°C)

Channel temperature

(Note 1)

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-2J1C

Weight: 6.8 mg (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Marking

Equivalent Circuit (top view)

N T

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

Start of commercial production

2010-01

2014-03-01

12 3 4 5

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