Datasheet > SSM6N58NU

SSM6N58NU

更新时间： 2024-11-06 14:56:39

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SSM6N58NU 数据手册

SSM6N58NU

MOSFETs Silicon N-Channel MOS

SSM6N58NU

1. Applications

•

Power Management Switches

•

DC-DC Converters

2. Features

(1) 1.8-V gate drive voltage.

(2) Low drain-source on-resistance

: RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V)

RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V)

RDS(ON) = 180 mΩ (max) (@VGS = 1.8 V)

3. Packaging and Pin Assignment

1. Source1

2. Gate1

3. Drain2

4. Source2

5. Gate2

6. Drain1

UDFN6

Start of commercial production

2012-11

2021-09-17

Rev.7.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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