Datasheet > SSM6N48FU(TE85L)

SSM6N48FU(TE85L)

更新时间： 2024-01-23 07:50:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	176K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-363

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SSM6N48FU(TE85L) 数据手册

SSM6N48FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

SSM6N48FU

Load Switching Applications

Unit: mm

•

2.5-V drive

N-ch 2-in-1

Low ON-resistance: R

= 3.2 Ω (max) (@V

= 4.0 V)

= 2.5 V)

DS(ON)

= 5.4 Ω (max) (@V

DS(ON)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

±20

DSS

Gate-Source voltage

GSS

100

Drain current

Pulse

400

Power dissipation

(Note 1)

300

°C

JEDEC

JEITA

―

Channel temperature

150

SC-88

2-2J1C

Storage temperature range

−55 to 150

°C

stg

TOSHIBA

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

Weight: 6.8 mg (typ.)

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32mm²× 6)

0.4 mm

Marking

Equivalent Circuit (top view)

2010-11-22

12 3 4 5

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