Datasheet > SSM6N61NU

SSM6N61NU

更新时间： 2023-12-20 18:44:50

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SSM6N61NU 数据手册

SSM6N61NU

MOSFETs Silicon N-Channel MOS

SSM6N61NU

1. Applications

•

Power Management Switches

•

DC-DC Converters

2. Features

(1) 1.5-V gate drive voltage.

(2) Low drain-source on-resistance

: RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V)

RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V)

RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V)

RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V)

3. Packaging and Pin Assignment

1. Source1

2. Gate1

3. Drain2

4. Source2

5. Gate2

6. Drain1

UDFN6

Start of commercial production

2015-12

2016-08-31

Rev.3.0

12 3 4 5 6 7 8

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