Datasheet > SSM6N62TU

SSM6N62TU

更新时间： 2024-09-19 14:58:03

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	377K
描述
N-ch x 2 MOSFET, 20 V, 0.8 A, 0.085 Ω@4.5V, SOT-363F(UF6)

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中文翻译

获取价格

数据手册

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SSM6N62TU 数据手册

SSM6N62TU

MOSFETs Silicon N-Channel MOS

SSM6N62TU

1. Applications

•

Power Management Switches

•

DC-DC Converters

2. Features

(1) AEC-Q101 qualified (Please see the orderable part number list)

(2) 1.2-V drive

(3) Low drain-source on-resistance

: RDS(ON) = 67 mΩ (typ.) (@VGS = 4.5 V)

RDS(ON) = 74 mΩ (typ.) (@VGS = 2.5 V)

RDS(ON) = 84 mΩ (typ.) (@VGS = 1.8 V)

RDS(ON) = 94 mΩ (typ.) (@VGS = 1.5 V)

RDS(ON) = 121 mΩ (typ.) (@VGS = 1.2 V)

3. Packaging and Pin Assignment

1: Source 1

2: Gate 1

3: Drain 2

4: Source 2

5: Gate 2

6: Drain 1

UF6

4. Orderable part number

Orderable part number

AEC-Q101

Note

SSM6N62TU,LF

�

General Use

SSM6N62TU,LXGF

SSM6N62TU,LXHF

YES

(Note 1)

Unintended Use

Automotive Use

(Note 1)

Note 1: For more information, please contact our sales or use the inquiry form on our website.

Start of commercial production

2016-04

2021-05-28

Rev.6.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7 8

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