Datasheet > SSM6N68NU

SSM6N68NU

更新时间： 2024-09-22 14:58:27

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SSM6N68NU 数据手册

SSM6N68NU

MOSFETs Silicon N-Channel MOS

SSM6N68NU

1. Applications

•

Power Management Switches

•

DC-DC Converters

2. Features

(1) AEC-Q101 qualified (Note 1)

(2) 1.8-V gate drive voltage.

(3) Low drain-source on-resistance

: RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V)

RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V)

RDS(ON) = 180 mΩ (max) (@VGS = 1.8 V)

Note 1: For detail information, please contact our sales.

3. Packaging and Pin Assignment

1. Source 1

2. Gate 1

3. Drain 2

4. Source 2

5. Gate 2

6. Drain 1

UDFN6

2021-01-07

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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