生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | unknown | 风险等级: | 5.74 |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 0.1 A | 最大漏源导通电阻: | 5.4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
SSM6N48FU(TE85L) | TOSHIBA | TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-363 |
获取价格 |
|
SSM6N48FU(TE85L,F) | TOSHIBA | TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-363 |
获取价格 |
|
SSM6N48FU,RF(D | TOSHIBA | 暂无描述 |
获取价格 |
|
SSM6N55NU | TOSHIBA | Power Management Switches DC-DC Converters |
获取价格 |
|
SSM6N56FE | TOSHIBA | N-ch x 2 MOSFET, 20 V, 0.8 A, 0.235 Ω@4.5V, S |
获取价格 |
|
SSM6N57NU | TOSHIBA | N-ch x 2 MOSFET, 30 V, 4.0 A, 0.0391 Ω@4.5V, |
获取价格 |