Datasheet > SSM6N04FU_07

SSM6N04FU_07

更新时间： 2024-01-11 13:20:42

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	616K
描述
High Speed Switch Applications

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中文翻译

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数据手册

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SSM6N04FU_07 数据手册

SSM6N04FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N04FU

High Speed Switch Applications

Unit: mm

•

With built-in gate-source resistor: R

2.5 V gate drive

Low gate threshold voltage: V = 0.7~1.3 V

Small package

= 1 MΩ (typ.)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

Gate-source voltage

DC drain current

GSS

100

Drain power dissipation

200

(Note 1)

Channel temperature

150

°C

Storage temperature range

stg

−55~150

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-2J1C

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

Weight: 6.8 mg (typ.)

Note 1: Total rating

Marking

Pin Assignment (top view)

(Q1, Q2 common)

Equivalent Circuit

2007-11-01

12 3 4 5

中文翻译

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