5秒后页面跳转
SSM6N16FE(TPL3,F) PDF预览

SSM6N16FE(TPL3,F)

更新时间: 2024-01-15 17:03:00
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 132K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-563

SSM6N16FE(TPL3,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.75最大漏极电流 (Abs) (ID):0.1 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.15 W子类别:FET General Purpose Powers
表面贴装:YESBase Number Matches:1

SSM6N16FE(TPL3,F) 数据手册

 浏览型号SSM6N16FE(TPL3,F)的Datasheet PDF文件第2页浏览型号SSM6N16FE(TPL3,F)的Datasheet PDF文件第3页浏览型号SSM6N16FE(TPL3,F)的Datasheet PDF文件第4页浏览型号SSM6N16FE(TPL3,F)的Datasheet PDF文件第5页 
SSM6N16FE  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM6N16FE  
High Speed Switching Applications  
Analog Switching Applications  
Unit: mm  
Suitable for high-density mounting due to compact package  
Low on resistance: R = 3.0 (max) (@V  
= 4 V)  
on  
GS  
: R = 4.0 (max) (@V  
= 2.5 V)  
on  
GS  
: R = 15 (max) (@V  
= 1.5 V)  
on  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 Common)  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
20  
±10  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
100  
D
Drain current  
mA  
Pulse  
I
200  
DP  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
P (Note 1)  
150  
mW  
°C  
D
T
ch  
150  
Storage temperature range  
T
stg  
55~150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
2-2N1D  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Note 1: Total rating, mounted on FR4 board  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm2 × 6)  
0.3 mm  
Marking  
Equivalent Circuit  
6
5
4
6
5
4
Q1  
D S  
Q2  
1
2
3
1
2
3
Handling Precaution  
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment  
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
1
2007-11-01  

与SSM6N16FE(TPL3,F)相关器件

型号 品牌 描述 获取价格 数据表
SSM6N16FE,L3F TOSHIBA Small Signal Field-Effect Transistor

获取价格

SSM6N16FE_07 TOSHIBA High Speed Switching Applications

获取价格

SSM6N16FU TOSHIBA High Speed Switching Applications Analog Switch Applications

获取价格

SSM6N16FU(T5LHLS,F TOSHIBA Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal

获取价格

SSM6N16FU_07 TOSHIBA High Speed Switching Applications

获取价格

SSM6N17FU TOSHIBA High Speed Switching Applications Analog Switch Applications

获取价格