是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.75 | 最大漏极电流 (Abs) (ID): | 0.1 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.15 W | 子类别: | FET General Purpose Powers |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
SSM6N16FE,L3F | TOSHIBA | Small Signal Field-Effect Transistor |
获取价格 |
|
SSM6N16FE_07 | TOSHIBA | High Speed Switching Applications |
获取价格 |
|
SSM6N16FU | TOSHIBA | High Speed Switching Applications Analog Switch Applications |
获取价格 |
|
SSM6N16FU(T5LHLS,F | TOSHIBA | Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal |
获取价格 |
|
SSM6N16FU_07 | TOSHIBA | High Speed Switching Applications |
获取价格 |
|
SSM6N17FU | TOSHIBA | High Speed Switching Applications Analog Switch Applications |
获取价格 |