5秒后页面跳转
捷配首页

Datasheet > SSM6N24TU(T5L,F,T)
SSM6N24TU(T5L,F,T) PDF预览

SSM6N24TU(T5L,F,T)

更新时间： 2024-01-17 05:11:46
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 183K
描述
Small Signal Field-Effect Transistor

阅读下载

中文翻译

获取价格

SSM6N24TU(T5L,F,T) 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.66
Base Number Matches：1

SSM6N24TU(T5L,F,T) 数据手册

 浏览型号SSM6N24TU(T5L,F,T)的Datasheet PDF文件第2页浏览型号SSM6N24TU(T5L,F,T)的Datasheet PDF文件第3页浏览型号SSM6N24TU(T5L,F,T)的Datasheet PDF文件第4页浏览型号SSM6N24TU(T5L,F,T)的Datasheet PDF文件第5页浏览型号SSM6N24TU(T5L,F,T)的Datasheet PDF文件第6页 
SSM6N24TU  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)  
SSM6N24TU  
High Speed Switching Applications  
Unit: mm  
•
•
Optimum for high-density mounting in small packages  
2.1±0.1  
1.7±0.1  
Low on-resistance:  
R
on  
on  
= 145mΩ (max) (@V  
= 180mΩ (max) (@V  
= 4.5 V)  
= 2.5 V)  
GS  
GS  
R
1
2
6
5
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
4
3
V
30  
± 12  
0.5  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
D
Drain current  
A
Pulse  
I
1.5  
DP  
P
D
Drain power dissipation  
Channel temperature  
500  
mW  
1.Source1 4.Source2  
(Note 1)  
2.Gate1  
3.Drain2  
5.Gate2  
6.Drain1  
T
ch  
150  
°C  
°C  
Storage temperature range  
T
stg  
−55 to 150  
UF6  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-2T1B  
Weight: 7.0 mg (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Note 1: Mounted on FR4 board. (total dissipation)  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
Q1  
NF  
Q2  
1
2
3
1
2
3
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is  
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects  
that come into direct contact with devices should be made of anti-static materials.  
Start of commercial production  
2004-01  
1
2014-03-01  
123456

中文翻译

下载PDF

与SSM6N24TU(T5L,F,T)相关器件

型号 品牌 获取价格 描述 数据表
SSM6N24TU(T5L,PP,F TOSHIBA

获取价格

 		Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal
SSM6N24TU(TE85L) TOSHIBA

获取价格

 		TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,500MA I(D),SOT-363VAR
SSM6N24TU(TE85L,F) TOSHIBA

获取价格

 		TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,500MA I(D),SOT-363VAR
SSM6N24TU,LF TOSHIBA

获取价格

 		Small Signal Field-Effect Transistor
SSM6N24TU,LF(B TOSHIBA

获取价格

 		Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal
SSM6N24TU,LF(T TOSHIBA

获取价格

 		暂无描述
SSM6N25TU TOSHIBA

获取价格

 		High Speed Switching Applications
SSM6N25TU(TE85L) TOSHIBA

获取价格

 		TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,500MA I(D),SOT-363VAR
SSM6N25TU(TE85L,F) TOSHIBA

获取价格

 		Trans MOSFET N-CH 20V 0.5A 6-Pin UF T/R
SSM6N25TU,RNINTF(T TOSHIBA

获取价格

 		Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal

与SSM6N24TU(T5L,F,T)相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证