SSM6N36FE,LM(T

更新时间： 2024-01-10 12:55:21

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体小信号场效应晶体管开关光电二极管
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数据手册

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SSM6N36FE,LM(T 数据手册

SSM6N36FE

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6N36FE

○High-Speed Switching Applications

Unit: mm

1.6±0.05

•

1.5-V drive

Low ON-resistance: R = 1.52 Ω (max) (@V

= 1.5 V)

= 1.8 V)

= 2.5 V)

= 4.5 V)

= 5.0 V)

1.2±0.05

: R = 1.14 Ω (max) (@V

: R = 0.85 Ω (max) (@V

: R = 0.66 Ω (max) (@V

: R = 0.63 Ω (max) (@V

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristics

Drain–source voltage

Symbol

Rating

Unit

± 10

DSS

Gate–source voltage

GSS

500

1.Source1

2.Gate1

3.Drain2

4.Source2

5.Gate2

Drain current

Pulse

1000

150

6.Drain1

Drain power dissipation

Channel temperature

Storage temperature

(Note 1)

°C

ES6

150

JEDEC

JEITA

―

stg

−55 to 150

°C

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

TOSHIBA

2-2N1A

Weight: 3.0 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: Total rating

Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm²× 6)

Marking

Equivalent Circuit (top view)

2008-02-26

12 3 4 5

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