Datasheet > SSM6N39TU

SSM6N39TU

更新时间： 2023-12-06 20:13:14

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	202K
描述
N-ch x 2 MOSFET, 20 V, 1.6 A, 0.119 Ω@4V, SOT-363F(UF6)

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SSM6N39TU 数据手册

SSM6N39TU

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type

SSM6N39TU

○Power Management Switch Applications

Unit: mm

2.1±0.1

○High-Speed Switching Applications

1.7±0.1

•

1.5-V drive

N-ch 2-in-1

Low ON-resistance:

= 247mΩ (max) (@V

= 190mΩ (max) (@V

= 139mΩ (max) (@V

= 119mΩ (max) (@V

= 1.5 V)

= 1.8 V)

= 2.5 V)

= 4.0 V)

Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

± 10

4.Source2

DSS

1.Source1

2.Gate1

5.Gate2

6.Drain1

Gate-source voltage

GSS

3.Drain2

1.6

Drain current

UF6

Pulse

3.2

Drain power dissipation

Channel temperature

(Note1)

500

°C

JEDEC

JEITA

―

150

TOSHIBA

2-2T1B

Storage temperature range

stg

−55 to 150

°C

Weight: 7.0mg (typ.)

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions

(i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

Note1: Mounted on an FR4 board. (total dissipation)

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm²)

Start of commercial production

2008-01

2014-03-01

12 3 4 5 6 7

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