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SSM6N43FU PDF预览

SSM6N43FU

更新时间: 2024-02-09 14:22:34
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 222K
描述
TRANSISTOR 500 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-2J1C, US6, 6 PIN, FET General Purpose Small Signal

SSM6N43FU 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.3
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压:20 V
最大漏极电流 (ID):0.5 A最大漏源导通电阻:0.85 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SSM6N43FU 数据手册

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SSM6N43FU  
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type  
SSM6N43FU  
High-Speed Switching Applications  
Unit: mm  
1.5-V drive  
Low ON-resistance : R  
= 1.52 (max) (@V  
= 1.5V)  
= 1.8V)  
= 2.5V)  
= 4.5V)  
= 5.0V)  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
GS  
GS  
GS  
GS  
GS  
: R  
: R  
: R  
: R  
= 1.14 (max) (@V  
= 0.85 (max) (@V  
= 0.66 (max) (@V  
= 0.63 (max) (@V  
Absolute Maximum Ratings (Ta = 25°C) (Q1,Q2 Common)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
20  
± 10  
V
V
DSS  
Gate-source voltage  
GSS  
DC  
I
500  
D
Drain current  
mA  
Pulse  
I
1000  
200  
1.SOURCE1  
2.GATE1  
4.SOURCE2  
5.GATE2  
DP  
(Note1)  
Drain power dissipation  
Channel temperature  
P
mW  
°C  
D
3.DRAIN2  
6.DRAIN1  
T
150  
ch  
US6  
Storage temperature range  
T
stg  
55 to 150  
°C  
JEDEC  
JEITA  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-2J1C  
Weight: 6.8 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
Q1  
Q2  
N S  
1
2
3
1
2
3
Start of commercial production  
2009-05  
1
2014-03-01  

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