是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.3 |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 0.5 A | 最大漏源导通电阻: | 0.85 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
SSM6N43FU,LF(T | TOSHIBA | SMALL SIGNAL, FET |
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SSM6N44FE | TOSHIBA | High Speed Switching Applications Analog Switching Applications |
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SSM6N44FE,LM(B | TOSHIBA | Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal |
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SSM6N44FU | TOSHIBA | N-ch x 2 MOSFET, 30 V, 0.1 A, 4.0 Ω@4V, SOT-3 |
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SSM6N44FU,LF | TOSHIBA | Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal |
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SSM6N48FU | TOSHIBA | Load Switching Applications |
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