Datasheet > SSM6N37FE(TP3L)

SSM6N37FE(TP3L)

更新时间： 2024-02-20 13:48:20

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	190K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,250MA I(D),SOT-363VAR

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技术参数
数据手册

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SSM6N37FE(TP3L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大漏极电流 (Abs) (ID)：	0.25 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.15 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

SSM6N37FE(TP3L) 数据手册

SSM6N37FE

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6N37FE

○High-Speed Switching Applications

単位: mm

1.6±0.05

○Analog Switching Applications

1.2±0.05

•

1.5-V drive

Suitable for high-density mounting due to compact package

Low ON-resistance

= 5.60 Ω (max) (@V

= 4.05 Ω (max) (@V

= 3.02 Ω (max) (@V

= 2.20 Ω (max) (@V

= 1.5 V)

= 1.8 V)

= 2.5 V)

= 4.5 V)

DS(ON)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Drain–source voltage

Symbol

Rating

Unit

± 10

1.Source1

2.Gate1

3.Drain2

4.Source2

5.Gate2

DSS

Gate–source voltage

GSS

6.Drain1

ES6

250

Drain current

Pulse

500

JEDEC

JEITA

―

Drain power dissipation

Channel temperature

Storage temperature

(Note 1)

150

°C

―

150

TOSHIBA

2-2N1D

stg

−55 to 150

°C

Weight: 3.0 mg (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm²× 6)

Marking

Equivalent Circuit (top view)

S U

2009-11-12

12 3 4 5

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