Datasheet > SSM6N37FU,LF(T

SSM6N37FU,LF(T

更新时间： 2024-02-25 01:12:03

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	214K
描述
Small Signal Field-Effect Transistor

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技术参数
数据手册

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SSM6N37FU,LF(T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.64
Base Number Matches：	1

SSM6N37FU,LF(T 数据手册

SSM6N37FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N37FU

○High Speed Switching Applications

○Analog Switch Applications

Unit: mm

•

1.5V drive

Low ON-resistance

= 5.60 Ω (max) (@V

= 4.05 Ω (max) (@V

= 3.02 Ω (max) (@V

= 2.20 Ω (max) (@V

= 1.5 V)

= 1.8 V)

= 2.5 V)

= 4.5 V)

DS(ON)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

± 10

DSS

Gate-Source voltage

Drain current

GSS

250

Pulse

500

Power dissipation

P (Note1)

300

°C

JEDEC

JEITA

―

Channel temperature

Storage temperature range

150

stg

−55 to 150

°C

TOSHIBA

2-2J1C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

Weight: 6.8 mg(typ.)

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32mm²× 6)

0.4 mm

Marking(top view)

Equivalent Circuit (top view)

Start of commercial production

2010-11

2014-03-01

12 3 4 5

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