SSM6N37FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N37FE
○High-Speed Switching Applications
単位: mm
1.6±0.05
○Analog Switching Applications
1.2±0.05
•
•
•
1.5-V drive
Suitable for high-density mounting due to compact package
Low ON-resistance
R
R
R
R
= 5.60 Ω (max) (@V
= 4.05 Ω (max) (@V
= 3.02 Ω (max) (@V
= 2.20 Ω (max) (@V
= 1.5 V)
= 1.8 V)
= 2.5 V)
= 4.5 V)
1
2
3
6
DS(ON)
DS(ON)
DS(ON)
DS(ON)
GS
GS
GS
GS
5
4
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Drain–source voltage
Symbol
Rating
Unit
V
V
20
± 10
V
V
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
DSS
Gate–source voltage
GSS
6.Drain1
ES6
DC
I
250
D
Drain current
mA
Pulse
I
500
DP
JEDEC
JEITA
―
Drain power dissipation
Channel temperature
Storage temperature
P
(Note 1)
150
mW
°C
D
―
T
ch
150
TOSHIBA
2-2N1D
T
stg
−55 to 150
°C
Weight: 3.0 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
Q1
Q2
S U
1
2
3
1
2
3
1
2009-11-12