SSM6N37CTD

更新时间： 2024-01-17 02:56:39

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	192K
描述
Power Management Switch Applications

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技术参数
数据手册

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SSM6N37CTD 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.64
Base Number Matches：	1

SSM6N37CTD 数据手册

SSM6N37CTD

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6N37CTD

○Power Management Switch Applications

Unit: mm

•

1.5V drive

Top View

Low ON-resistance

= 5.60 Ω (max) (@V

= 4.05 Ω (max) (@V

= 3.02 Ω (max) (@V

= 2.20 Ω (max) (@V

= 1.5 V)

= 1.8 V)

= 2.5 V)

= 4.5 V)

1.0±0.05

0.15±0.03

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

0.075±0.03

0.35

Characteristic

Drain–source voltage

Symbol

Rating

Unit

±0.02 ±0.02

0.7±0.03

± 10

DSS

Gate–source voltage

GSS

250

Drain current

4.Source2

1.Source1

2.Gate1

Pulse

500

5.Gate2

6.Drain1

CST6D

Drain power dissipation

Channel temperature

Storage temperature

(Note 1)

140

°C

3.Drain2

150

stg

−55 to 150

°C

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

TOSHIBA

2-1S1A

Weight : 1.0 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Mounted on an FR4 board

(10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm²)

Marking

Pin Condition (top view)

Equivalent Circuit (top view)

Polarity mark (on the top)

Polarity mark

*Electrodes: on the bottom

2009-08-11

12 3 4 5

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