SSM6N24TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6N24TU
High Speed Switching Applications
Unit: mm
•
•
Optimum for high-density mounting in small packages
2.1±0.1
1.7±0.1
Low on-resistance:
R
on
on
= 145mΩ (max) (@V
= 180mΩ (max) (@V
= 4.5 V)
= 2.5 V)
GS
GS
R
1
2
6
5
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
4
3
V
30
± 12
0.5
V
V
DS
Gate-Source voltage
V
GSS
DC
I
D
Drain current
A
Pulse
I
1.5
DP
P
D
Drain power dissipation
Channel temperature
500
mW
1.Source1 4.Source2
(Note 1)
2.Gate1
3.Drain2
5.Gate2
6.Drain1
T
ch
150
°C
°C
Storage temperature range
T
stg
−55~150
UF6
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
―
―
TOSHIBA
2-2T1B
Weight: 7.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation)
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
Q1
NF
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01