SSM6N25TU

更新时间： 2024-01-17 13:02:05

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
7页	174K
描述
High Speed Switching Applications

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数据手册

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SSM6N25TU 数据手册

SSM6N25TU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

SSM6N25TU

High Speed Switching Applications

Unit: mm

•

Optimum for high-density mounting in small packages

2.1±0.1

1.7±0.1

Low on-resistance:

= 395mΩ (max) (@V

= 190mΩ (max) (@V

= 145mΩ (max) (@V

= 1.8 V)

= 2.5 V)

= 4.0 V)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

± 12

0.5

Gate-Source voltage

GSS

Drain current

1.Source1 4.Source2

Pulse

1.5

2.Gate1

3.Drain2

5.Gate2

6.Drain1

Drain power dissipation

Channel temperature

500

(Note 1)

150

°C

Storage temperature range

stg

−55~150

UF6

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-2T1B

Weight: 7.0 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Mounted on FR4 board. (total dissipation)

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )

Marking

Equivalent Circuit (top view)

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5 6 7

中文翻译

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