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SSM6N36FE,LM(B PDF预览

SSM6N36FE,LM(B

更新时间: 2024-02-18 14:33:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 197K
描述
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SSM6N36FE,LM(B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
Factory Lead Time:12 weeks风险等级:5.66
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SSM6N36FE,LM(B 数据手册

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SSM6N36FE  
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type  
SSM6N36FE  
High-Speed Switching Applications  
Unit: mm  
1.6±0.05  
1.5-V drive  
Low ON-resistance: R = 1.52 (max) (@V  
= 1.5 V)  
= 1.8 V)  
= 2.5 V)  
= 4.5 V)  
= 5.0 V)  
on  
GS  
1.2±0.05  
: R = 1.14 (max) (@V  
on  
GS  
GS  
GS  
GS  
: R = 0.85 (max) (@V  
on  
: R = 0.66 (max) (@V  
on  
1
2
3
6
: R = 0.63 (max) (@V  
on  
5
4
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristics  
Drain–source voltage  
Symbol  
Rating  
Unit  
V
V
20  
± 10  
V
V
DSS  
Gate–source voltage  
GSS  
DC  
I
500  
D
1.Source1  
2.Gate1  
3.Drain2  
4.Source2  
5.Gate2  
Drain current  
mA  
Pulse  
I
1000  
150  
DP  
6.Drain1  
Drain power dissipation  
Channel temperature  
Storage temperature  
P
(Note 1)  
mW  
°C  
ES6  
D
T
150  
ch  
JEDEC  
JEITA  
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
TOSHIBA  
2-2N1A  
Weight: 3.0 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1: Total rating  
Mounted on an FR4 board  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
Q1  
NX  
Q2  
1
2
3
1
2
3
1
2008-02-26  

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