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SSM6N36FE,LM(B

更新时间： 2024-02-21 02:00:55
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 197K
描述
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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SSM6N36FE,LM(B 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
Factory Lead Time：12 weeks风险等级：5.66
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SSM6N36FE,LM(B 数据手册

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SSM6N36FE  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
= 1 mA, V  
= 1 mA, V  
= 0  
20  
12  
⎯
⎯
⎯
⎯
⎯
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-source breakdown voltage  
= - 10 V  
Drain cutoff current  
I
V
V
V
V
=20 V, V  
= 0  
⎯
1
μA  
μA  
V
DSS  
DS  
GS  
DS  
DS  
GS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ±10 V, V  
= 0  
⎯
⎯
±1  
GSS  
DS  
V
= 3 V, I = 1 mA  
0.35  
420  
⎯
⎯
1.0  
⎯
th  
D
|Y |  
fs  
= 3 V, I = 200 mA  
(Note2)  
= 5.0 V (Note2)  
= 4.5 V (Note2)  
= 2.5 V (Note2)  
= 1.8 V (Note2)  
840  
0.46  
0.51  
0.66  
0.81  
0.95  
46  
mS  
D
I
I
I
I
I
= 200 mA, V  
= 200 mA, V  
= 200 mA, V  
= 100 mA, V  
0.63  
0.66  
0.85  
1.14  
1.52  
⎯
D
D
D
D
D
GS  
GS  
GS  
GS  
⎯
Drain-source ON-resistance  
R
Ω
⎯
DS (ON)  
⎯
= 50 mA, V  
= 1.5 V  
(Note2)  
⎯
GS  
Input capacitance  
C
C
⎯
iss  
V
= 10 V, V  
= 0, f = 1 MHz  
GS  
pF  
nC  
Output capacitance  
Reverse transfer capacitance  
Total Gate Charge  
⎯
10.8  
7.3  
⎯
DS  
oss  
C
⎯
⎯
rss  
Qg  
⎯
1.23  
0.60  
0.63  
30  
⎯
V
V
= 10V, I = 0.5 A  
D
DS  
GS  
Qgs  
Qgd  
Gate−Source Charge  
Gate−Drain Charge  
⎯
⎯
= 4.0 V  
⎯
⎯
Turn-on time  
Switching time  
t
t
V
V
= 10 V, I = 200 mA  
⎯
⎯
on  
DD  
GS  
D
ns  
V
= 0 to 2.5 V, R = 50 Ω  
Turn-off time  
⎯
75  
⎯
G
off  
Drain-source forward voltage  
Note2: Pulse test  
V
I
= -0.5 A, V = 0 V  
GS  
(Note2)  
⎯
-0.88  
-1.2  
DSF  
D
Switching Time Test Circuit (Q1, Q2 Common)  
(a) Test Circuit  
(b) V  
(c) V  
IN  
2.5 V  
0 V  
90%  
V
= 10 V  
= 50 Ω  
DD  
2.5 V  
0
OUT  
R
G
10%  
IN  
D.U. ≤ 1%  
: t , t < 5 ns  
V
IN  
r f  
V
DD  
Common Source  
90%  
10%  
OUT  
10 μs  
Ta = 25°C  
V
DD  
V
DS (ON)  
t
t
f
r
t
t
off  
on  
Usage Considerations  
Let V be the voltage applied between gate and source that causes the drain current (I ) to below (1 mA for the  
th  
D
SSM6N36FE). Then, for normal switching operation, V  
must be higher than V and V  
must be lower than  
GS(off)  
GS(on)  
th,  
V
This relationship can be expressed as: V < V < V  
GS(off) th GS(on).  
th.  
Take this into consideration when using the device.  
Handling Precaution  
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is  
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that  
come into direct contact with devices should be made of antistatic materials.  
2
2008-02-26  
12345

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