Datasheet > SSM6N16FE,L3F

SSM6N16FE,L3F

更新时间： 2024-02-21 07:25:56

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	241K
描述
Small Signal Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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SSM6N16FE,L3F 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SSM6N16FE,L3F 数据手册

SSM6N16FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N16FE

High Speed Switching Applications

Analog Switching Applications

Unit: mm

 Suitable for high-density mounting due to compact package

 Low on resistance: R = 3.0 Ω (max) (@V

on GS

= 4 V)

: R = 4.0 Ω (max) (@V

= 2.5 V)

= 1.5 V)

: R = 15 Ω (max) (@V

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

Gate-Source voltage

±10

100

200

GSS

Drain current

Pulse

Drain power dissipation (Ta = 25°C)

(Note 1)

150

Channel temperature

150

°C

Storage temperature range

-55 to 150

stg

JEDEC

JEITA

―

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

TOSHIBA

2-2N1D

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Weight: 3.0 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating, mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm²× 6)

0.3 mm

Marking

Equivalent Circuit

D S

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the

environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and

containers and other objects that come into direct contact with devices should be made of anti-static materials.

Start of commercial production

2001-03

Toshiba Electronic Devices & Storage Corporation

2017-07-11

12 3 4 5

中文翻译

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SSM6N16FU(T5LHLS,F	TOSHIBA	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
SSM6N16FU_07	TOSHIBA	获取价格	High Speed Switching Applications
SSM6N17FU	TOSHIBA	获取价格	High Speed Switching Applications Analog Switch Applications
SSM6N17FU(TE85L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-363
SSM6N17FU(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-363
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