Datasheet > SSM6N17FU(TE85L,F)

SSM6N17FU(TE85L,F)

更新时间： 2024-01-20 21:06:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	117K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-363

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SSM6N17FU(TE85L,F) 数据手册

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SSM6N17FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N17FU

High Speed Switching Applications

Unit: mm

Analog Switch Applications

•

Suitable for high-density mounting due to compact package

High drain-source voltage

High speed switching

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

±7

Gate-Source voltage

GSS

100

Drain current

Pulse

200

Drain power dissipation (Ta = 25°C)

Channel temperature

P (Note 1)

200

°C

150

Storage temperature range

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

SC-70 (6pin)

2-2J1C

TOSHIBA

Weight: 6.8 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Note 1: Total rating,Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm²× 6)

0.4 mm

Marking

Equivalent Circuit

D M

This transistor is a electrostatic sensitive device. Please handle with caution.

2007-11-01

12 3 4 5

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