Datasheet > SSM6N15FE(TPL3)

SSM6N15FE(TPL3)

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	184K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,100MA I(D),TSOP

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中文翻译

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技术参数
数据手册

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SSM6N15FE(TPL3) 技术参数

是否Rohs认证：	不符合	生命周期：	Not Recommended
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
最大漏极电流 (Abs) (ID)：	0.1 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.15 W
子类别：	FET General Purpose Powers	表面贴装：	YES
Base Number Matches：	1

SSM6N15FE(TPL3) 数据手册

SSM6N15FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N15FE

High Speed Switching Applications

Analog Switching Applications

Unit: mm

•

Small package

Low ON resistance : R = 4.0 Ω (max) (@V

= 4 V)

= 2.5 V)

: R = 7.0 Ω (max) (@V

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

±20

Gate-Source voltage

GSS

100

Drain current

1: Source1

Pulse

200

2: Gate1

3: Drain2

4: Source2

5: Gate2

6: Drain1

Drain power dissipation (Ta = 25°C)

Channel temperature

(Note 1)

150

°C

150

Storage temperature range

stg

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-2N1D

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

Weight: 3mg (typ.)

Note 1: Total rating, mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 6)

0.3 mm

Marking

Equivalent Circuit (top view)

D P

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

中文翻译

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与SSM6N15FE(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
SSM6N15FE(TPL3,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,100MA I(D),TSOP
SSM6N15FU	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N15FU(TE85L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-363
SSM6N15FU(TE85L,F)	TOSHIBA	获取价格	TRANS MOSFET N/P-CH
SSM6N15FU_07	TOSHIBA	获取价格	High Speed Switching Applications
SSM6N16FE	TOSHIBA	获取价格	High Speed Switching Applications Analog Switching Applications
SSM6N16FE(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-563
SSM6N16FE(TPL3,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-563
SSM6N16FE,L3F	TOSHIBA	获取价格	Small Signal Field-Effect Transistor
SSM6N16FE_07	TOSHIBA	获取价格	High Speed Switching Applications

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