5秒后页面跳转
SSM6N15FU(TE85L) PDF预览

SSM6N15FU(TE85L)

更新时间: 2024-02-03 06:43:40
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 153K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-363

SSM6N15FU(TE85L) 技术参数

是否Rohs认证:不符合生命周期:Not Recommended
包装说明:,Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
最大漏极电流 (Abs) (ID):0.1 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.2 W
子类别:FET General Purpose Powers表面贴装:YES
Base Number Matches:1

SSM6N15FU(TE85L) 数据手册

 浏览型号SSM6N15FU(TE85L)的Datasheet PDF文件第2页浏览型号SSM6N15FU(TE85L)的Datasheet PDF文件第3页浏览型号SSM6N15FU(TE85L)的Datasheet PDF文件第4页浏览型号SSM6N15FU(TE85L)的Datasheet PDF文件第5页 
SSM6N15FU  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM6N15FU  
High Speed Switching Applications  
Unit: mm  
Analog Switching Applications  
Small package  
Low ON resistance : R = 4.0 (max) (@V  
= 4 V)  
= 2.5 V)  
on  
GS  
GS  
: R = 7.0 (max) (@V  
on  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 Common)  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
30  
±20  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
100  
D
Drain current  
mA  
Pulse  
I
200  
DP  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
P
(Note 1)  
200  
mW  
°C  
D
T
ch  
150  
JEDEC  
JEITA  
Storage temperature range  
T
stg  
55~150  
°C  
TOSHIBA  
2-2J1C  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
Weight: 6.8 mg (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
Q1  
D P  
Q2  
1
2
3
1
2
3
Handling Precaution  
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment  
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
1
2007-11-01  

与SSM6N15FU(TE85L)相关器件

型号 品牌 获取价格 描述 数据表
SSM6N15FU(TE85L,F) TOSHIBA

获取价格

TRANS MOSFET N/P-CH
SSM6N15FU_07 TOSHIBA

获取价格

High Speed Switching Applications
SSM6N16FE TOSHIBA

获取价格

High Speed Switching Applications Analog Switching Applications
SSM6N16FE(TE85L,F) TOSHIBA

获取价格

TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-563
SSM6N16FE(TPL3,F) TOSHIBA

获取价格

TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-563
SSM6N16FE,L3F TOSHIBA

获取价格

Small Signal Field-Effect Transistor
SSM6N16FE_07 TOSHIBA

获取价格

High Speed Switching Applications
SSM6N16FU TOSHIBA

获取价格

High Speed Switching Applications Analog Switch Applications
SSM6N16FU(T5LHLS,F TOSHIBA

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
SSM6N16FU_07 TOSHIBA

获取价格

High Speed Switching Applications