Datasheet > SSM6N15FU_07

SSM6N15FU_07

更新时间： 2024-02-13 02:45:43

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	176K
描述
High Speed Switching Applications

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数据手册

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SSM6N15FU_07 数据手册

SSM6N15FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N15FU

High Speed Switching Applications

Unit: mm

Analog Switching Applications

•

Small package

Low ON resistance : R = 4.0 Ω (max) (@V

= 4 V)

= 2.5 V)

: R = 7.0 Ω (max) (@V

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

±20

Gate-Source voltage

GSS

100

Drain current

Pulse

200

Drain power dissipation (Ta = 25°C)

Channel temperature

(Note 1)

200

°C

150

Storage temperature range

−55~150

°C

JEDEC

JEITA

―

stg

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-2J1C

Weight: 6.8 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Marking

Equivalent Circuit (top view)

D P

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

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