生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.64 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 0.1 A |
最大漏源导通电阻: | 7 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F6 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM6N15FE(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,100MA I(D),TSOP | |
SSM6N15FE(TPL3) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,100MA I(D),TSOP | |
SSM6N15FE(TPL3,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,100MA I(D),TSOP | |
SSM6N15FU | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type | |
SSM6N15FU(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-363 | |
SSM6N15FU(TE85L,F) | TOSHIBA |
获取价格 |
TRANS MOSFET N/P-CH | |
SSM6N15FU_07 | TOSHIBA |
获取价格 |
High Speed Switching Applications | |
SSM6N16FE | TOSHIBA |
获取价格 |
High Speed Switching Applications Analog Switching Applications | |
SSM6N16FE(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-563 | |
SSM6N16FE(TPL3,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,100MA I(D),SOT-563 |