Datasheet > SSM6N05FU_07

SSM6N05FU_07

更新时间： 2024-02-25 01:59:17

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	154K
描述
High Speed Switching Applications

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中文翻译

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数据手册

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SSM6N05FU_07 数据手册

SSM6N05FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N05FU

High Speed Switching Applications

Unit: mm

•

Small package

Low on resistance : R = 0.8 Ω (max) (@V

= 4 V)

: R = 1.2 Ω (max) (@V

= 2.5 V)

•

Low gate threshold voltage

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

±12

Gate-Source voltage

GSS

400

Drain current

Pulse

800

Drain power dissipation (Ta = 25°C)

Channel temperature

(Note 1)

300

°C

150

JEDEC

JEITA

―

Storage temperature range

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-2J1C

Weight: 6.8 mg (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating, mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6)

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

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