Datasheet > SSM6N09FU

SSM6N09FU

更新时间： 2024-01-08 22:29:42

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	149K
描述
High Speed Switching Applications

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中文翻译

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数据手册

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SSM6N09FU 数据手册

SSM6N09FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N09FU

High Speed Switching Applications

Unit: mm

Small package

Low Drain-Source ON resistance.

: R = 0.7 Ω (max) (@V = 10 V)

: R = 1.2 Ω (max) (@V = 4 V)

on GS

Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

±20

Gate-Source voltage

GSS

400

Drain current

Pulse

800

Drain power dissipation (Ta = 25°C)

Channel temperature

(Note1)

300

°C

150

Storage temperature range

-55~150

°C

stg

JEDEC

JEITA

―

Note1: Total rating, mounted on FR4 board

(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm ´ 6) Figure 1.

TOSHIBA

2-2J1C

Weight: 6.8 mg (typ.)

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2003-02-19

12 3 4 5

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