Datasheet > SSM3K72KFS

SSM3K72KFS

更新时间： 2024-01-16 19:49:34

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	228K
描述
N-ch MOSFET, 60 V, 0.3 A, 1.5 Ω@10V, SOT-416(SSM)

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SSM3K72KFS 数据手册

SSM3K72KFS

6. Electrical Characteristics

6.1. Static Characteristics (Unless otherwise specified, Ta = 25 ꢀ)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

IGSS

IDSS

VDS = 0 V, VGS = ±16 V

�

1.1

�

±10

µA

Drain cut-off current

VDS = 60 V, VGS = 0 V

Drain-source breakdown voltage

Gate threshold voltage

V(BR)DSS ID = 250 µA, VGS = 0 V

Vth VDS = VGS, ID = 250 µA

�

2.1

1.75

1.65

1.5

�

Drain-source on-resistance

(Note 1) RDS(ON) ID = 100 mA, VGS = 4.5 V

ID = 100 mA, VGS = 5.0 V

1.2

1.15

1.05

Ω

ID = 100 mA, VGS = 10 V

Forward transfer admittance

(Note 1)

|Yfs|

VDS = 10 V, ID = 200 mA

Note 1: Pulse measurement.

6.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 ꢀ)

Characteristics

Input capacitance

Symbol

Test Condition

Min

Typ.

Max

Unit

Ciss

Crss

Coss

VDS = 10 V, VGS = 0 V,

f = 1 MHz

�

1.3

5.5

3.6

5.5

�

Reverse transfer capacitance

Output capacitance

Switching time (rise time)

VDD = 30 V, ID = 200 mA,

VGS = 0 to 10 V, RG = 50 Ω

Duty ≤ 1%, VIN: tr, tf < 5 ns,

Common source

Switching time (turn-on delay time)

Switching time (fall time)

td(on)

Switching time (turn-off delay time)

td(off)

6.3. Switching Time Test Circuit

Fig. 6.3.1 Switching Time Test Circuit

Fig. 6.3.2 Input Waveform/Output Waveform

6.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25 ꢀ)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Total gate charge (gate-source plus gate-drain)

Gate-source charge

Qgs

Qgd

VDD = 30 V, ID = 200 mA,

VGS = 4.5 V

�

0.39

0.2

0.6

�

Gate-drain charge

0.11

�

Toshiba Electronic Devices & Storage Corporation

2021-06-03

Rev.6.0

1 234 5 6 7...9

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