Datasheet > SSE4N60_15

SSE4N60_15

更新时间： 2024-09-16 01:19:55

品牌	Logo	应用领域
SECOS		/
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N-Channel Enhancement Mode Power MOSFET

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SSE4N60_15 数据手册

SSE4N60

4.1A, 600 V, R_DS(ON)2.5 Ω

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

TO-220Y

The N-Channel MOSFET is used an advanced

termination scheme to provide enhanced voltage-blocking

capability without degrading performance over time.

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance. This device is well suited for high efficiency

switched mode power suppliers, active power factor correction,

electronic lamp ballasts based half bridge topology.

FEATURES

ꢀ

Robust high voltage termination

Avalanche energy specified

Diode is characterized for use in bridge circuits

Source to Drain diode recovery time comparable to a

discrete fast recovery diode.

Drain

2 3

Millimeter

Min. Max.

Millimeter

Min. Max.

REF.

Gate

10.6

1.82

1.45

16.50

4.00

3.30

1.78

1.00

12.70

3.60

1.14

5.84

2.03

0.35

2.34

14.70

4.80

1.40

6.86

2.90

0.64

2.74

1.58

1.20

14.22

3.50

2.70

1.20

0.50

Source

ABSOLUTE MAXIMUM RATINGS (T_c=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

600

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±30

Continuous Drain Current

I_D

4.1

Pulsed Drain Current

I_DM

16.4

Power Dissipation ²

P_D

Derating factor above 25°C

0.78

262

W / °C

°C

Single Pulsed Avalanche Energy ¹

Repetitive Avalanche Energy ²

Operating Junction and Storage Temperature Range

E_AS

E_AR

3.9

T_J, T_stg

150,-55 ~ 150

Thermal Resistance Rating

Maximum Junction to Ambient ¹

R_θJA

R_θJC

62.5

1.28

°C / W

Maximum Junction to Case

Notes:

1. L=26mH, I_AS=4.1A, V_DD=50V, R_G=50Ω, Starting T_J=25°C

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

02-May-2013 Rev. A

Page 1 of 6

12 3 4 5 6

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