Datasheet > SSE90N06-10P_11

SSE90N06-10P_11

更新时间： 2024-09-15 09:05:03

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	612K
描述
90A , 60V , RDS(ON) 9.9 m N-Channel Enhancement Mode MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SSE90N06-10P_11 数据手册

SSE90N06-10P

90A , 60V , R_DS(ON)9.9 m

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

TO-220P

DESCRIPTION

These miniature surface mount MOSFETs utilize a

High Cell Density trench process to provide low R_DS(on)

and to ensure minimal power loss and heat dissipation.

FEATURES



Low R_DS(on)Provides Higher Efficiency and

Extends Battery Life.



Low Thermal impedance copper leadframe

TO-220P saves board space.

Fast Switch speed.



High performance trench technology.

APPLICATION

DC-DC converters and power management in portable

and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

1 2 3

Millimeter

N-Channel

REF.

Min.

7.90

9.45

9.87

1.06

2.60

6.30

8.35

Max.

8.10

9.65

10.47

11.50

1.46

3.00

6.70

8.75

Min.

Max.

D₂

0.75

0.66

13.50

2.44

3.50

1.15

4.30

0.95

0.86

14.50

3.44

3.70

1.45

4.70

2.7

G₁

1.60 Typ.

1.89

0.40

2.60

3.09

0.60

3.60

S₃

1.10

1.17

1.30

1.37

1.50

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

V_GS

I_D

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current ¹

Pulsed Drain Current ²

±20

T_C= 25°C

I_DM

240

Continuous Source Current (Diode Conduction) ^a

Power Dissipation ¹

I_S

P_D

120

°C

Operating Junction and Storage Temperature Range

T_j, T_stg

-55~175

Thermal Resistance Rating

Maximum Junction to Ambient ¹

R_

62.5

°C / W

Maximum Junction to Case

Notes

R_JC

1.25

Package Limited.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

12-Aug-2011 Rev.B

Page 1 of 4

12 3 4

中文翻译

下载PDF

与SSE90N06-10P_11相关器件

型号	品牌	获取价格	描述	数据表
SSE90N06-15P	SECOS	获取价格	N-Channel Enhancement Mode Mos.FET
SSE90N06-30P	SECOS	获取价格	N-Channel Enhancement Mode Mos.FET
SSE90N08-08	SECOS	获取价格	90A , 80V , RDS(ON) 11m N-Channel Enhancement Mode MOSFET
SSE90N10-14	SECOS	获取价格	90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET
SSE90P06-08P	SECOS	获取价格	-90A , -60V , RDS(ON) 12m P-Channel Enhancement Mode MOSFET
SSE9575	SECOS	获取价格	P-Channel Enhancement Mode Power Mos.FET
SSE9971	SECOS	获取价格	N-Channel Enhancement Mode Power Mos.FET
SSE9973	SECOS	获取价格	N-Channel Enhancement Mode Power Mos.FET
SSEPAA5-02N	SSC	获取价格	Low Capacitance ESD Protection Array For High Speed Data Interfaces
SSEPAA5-02S	SSC	获取价格	Low Capacitance ESD Protection Array For High Speed Data Interfaces