Datasheet > SSE90N06-15P

SSE90N06-15P

更新时间： 2024-09-15 12:20:19

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SECOS		/
页数	文件大小	规格书
4页	355K
描述
N-Channel Enhancement Mode Mos.FET

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SSE90N06-15P 数据手册

SSE90N06-15P

90 A, 60 V, R_DS(ON)10.5 m

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

TO-220P

DESCRIPTION

These miniature surface mount MOSFETs utilize High Cell Density

trench process to provide low R_DS(on)and to ensure minimal power loss

and heat dissipation. Typical applications are DC-DC converters and

power management in portable and battery-powered products such as

computers, printers, PCMCIA cards, cellular and cordless telephones.

TYPICAL APPLICATIONS



Low R_DS(on)Provides Higher Efficiency and

Extends Battery Life.

Low Thermal impedance copper leadframe

TO-220P saves board space.

Fast Switch speed.



High performance trench technology.

PRODUCT SUMMARY

SSE90N06-15P

V_DS(V)

R_DS(on) (m

10.5@V_GS= 10V

13@V_GS= 4.5V

I_D(A)

90 ¹

2 3

Dimensions in millimeters

Millimeter

REF.

Min.

Max.

8.10

9.65

10.47

11.50

1.46

3.00

6.70

8.75

Min.

0.75

0.66

13.50

2.44

3.50

1.15

4.30

Max.

0.95

0.86

14.50

3.44

3.70

1.45

4.70

2.7

N-Channel

7.90

9.45

9.87

1.06

2.60

6.30

8.35

D₂

G₁

1.60 Typ.

1.89

0.40

2.60

3.09

0.60

3.60

1.10

1.17

1.30

1.37

1.50

S₃

ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)

Ratings

Maximum

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current ¹

Pulsed Drain Current ²

V_DS

V_GS

I_D

I_DM

I_S

±20

240

T_C= 25°C

Continuous Source Current (Diode Conduction) ^a

Power Dissipation ¹

P_D

T_j, T_stg

300

°C

Operating Junction and Storage Temperature Range

-55 ~ 175

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Maximum

Unit

Maximum Junction to Ambient ¹

R_JA

R_JC

62.5

0.5

°C / W

Maximum Junction to Case

Notes

Package Limited.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

29-Nov-2010 Rev. A

Page 1 of 4

12 3 4

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