Datasheet > SSE90N06-30P

SSE90N06-30P

更新时间： 2024-11-01 09:05:03

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SECOS		/
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2页	164K
描述
N-Channel Enhancement Mode Mos.FET

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SSE90N06-30P 数据手册

SSE90N06-30P

N-Channel Enhancement Mode Mos.FET

87 A, 60 V, R_DS(ON)26.5 m

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

TO-220P

DESCRIPTION

These miniature surface mount MOSFETs utilize High Cell Density

trench process to provide low R_DS(on)and to ensure minimal power loss

and heat dissipation. Typical applications are DC-DC converters and

power management in portable and battery-powered products such as

computers, printers, PCMCIA cards, cellular and cordless telephones.

TYPICAL APPLICATIONS



Low R_DS(on)Provides Higher Efficiency and

Extends Battery Life.

Low Thermal impedance copper leadframe

TO-220P saves board space.

Fast Switch speed.



High performance trench technology.

PRODUCT SUMMARY

SSE90N06-30P

V_DS(V)

R_DS(on) (m

26.5@V_GS= 10V

32.5@V_GS= 4.5V

I_D(A)

87 ¹

2 3

Dimensions in millimeters

Millimeter

REF.

Min.

Max.

8.10

9.65

10.47

11.50

1.46

3.00

6.70

8.75

Min.

0.75

0.66

13.50

2.44

3.50

1.15

4.30

Max.

N-Channel

7.90

9.45

9.87

1.06

2.60

6.30

8.35

0.95

0.86

14.50

3.44

3.70

1.45

4.70

2.7

D₂

G₁

1.60 Typ.

1.89

0.40

2.60

3.09

0.60

3.60

1.10

1.17

1.30

1.37

1.50

S₃

ABSOLUTE MAXIMUM RATINGS(T_A=25°C UNLESS OTHERWISE NOTED)

Ratings

Maximum

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current ¹

Pulsed Drain Current ²

V_DS

V_GS

I_D

I_DM

I_S

±20

240

T_C= 25°C

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

P_D

T_j, T_stg

300

°C

Operating Junction and Storage Temperature Range

-55 ~ 175

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Maximum

Unit

Maximum Junction to Ambient ¹

R_JA

R_JC

62.5

0.5

°C / W

Maximum Junction to Case

Notes

Package Limited.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

29-Nov-2010 Rev. A

Page 1 of 2

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