Datasheet > SSE55N03

SSE55N03

更新时间： 2024-09-15 06:14:23

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	594K
描述
N-Channel Enhancement Mode Power Mos.FET

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SSE55N03 数据手册

SSE55N03

55 A, 25 V, R_DS(ON)6 mΩ

N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

The SSE55N03 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications

and suited for low voltage applications such as DC/DC converters.

FEATURES

Dynamic dv/dt Rating

Simple Drive Requirement

Repetitive Avalanche Rated

Fast Switching

PACKAGE DIMENSIONS

Millimeter

Min. Max.

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

4.40

0.76

0.36

8.60

9.80

14.7

6.20

1.25

1.17

1.45

1.47

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

ABSOLUTE MAXIMUM RATINGS

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

Gate-Source Voltage

V_GS

±20

Drain Current,V_GS@ 10V

Pulsed Drain Current¹

I_D@Ta=25℃

I_D@Ta=100℃

I_DM

215

Total Power Dissipation

P_D@Tc=25℃

62.5

0.5

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy²

Single Pulse Avalanche Current

Operating Junction and Storage Temperature Range

E_AS

I_AS

240

Tj, Tstg

-55 ~ +150

°C

THERMAL DATA

Parameter

Symbol

Rθj-case

Rθj-amb

Value

2.0

Unit

°C/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

01-June-2005 Rev. A

Page 1 of 4

12 3 4

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