Datasheet > SSE75N03

SSE75N03

更新时间： 2024-09-15 09:05:03

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	622K
描述
N-Channel Enhancement Mode Power Mos.FET

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SSE75N03 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

SSE75N03 数据手册

SSE75N03

75 A, 25 V, R_DS(ON)4.5 mΩ

N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

The SSE75N03 used advanced design and process to achieve low gate charge, low on-resistance and fast

switching performance. The through-hole version (TO-220) is available for low-profile applications and suited for low

voltage applications such as DC/DC converters.

FEATURES

Low Gate Charge

Simple Drive Requirement

Fast Switching

PACKAGE DIMENSIONS

Millimeter

Min. Max.

REF.

Min.

Max.

4.80

1.00

0.50

9.00

10.4

15.3

6.60

4.40

0.76

0.36

8.60

9.80

14.7

6.20

1.25

1.17

1.45

1.47

13.25

14.25

2.54 REF.

2.60

3.71

2.60

2.89

3.96

2.80

ABSOLUTE MAXIMUM RATINGS

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

Gate-Source Voltage

V_GS

±20

Drain Current,V_GS@ 4.5V

Pulsed Drain Current¹

I_D@Ta=25℃

I_D@Ta=100℃

I_DM

62.5

350

Total Power Dissipation

P_D@Tc=25℃

Linear Derating Factor

0.76

400

W/°C

Single Pulse Avalanche Energy²

Single Pulse Avalanche Current

Operating Junction and Storage Temperature Range

E_AS

I_AS

Tj, Tstg

-55 ~ +150

°C

THERMAL DATA

Parameter

Symbol

Rθj-case

Rθj-amb

Value

1.3

Unit

°C/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

01-June-2005 Rev. A

Page 1 of 4

12 3 4

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