Datasheet > SSD50N10_15

SSD50N10_15

更新时间： 2024-11-14 01:22:27

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	574K
描述
N-Ch Enhancement Mode Power MOSFET

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SSD50N10_15 数据手册

SSD50N10

50A , 100V , R_DS(ON)22mΩ

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

TO-252(D-Pack)

DESCRIPTION

The SSD50N10 is the highest performance trench

N-ch MOSFETs with extreme high cell density , which provide

excellent R_DS(on)and gate charge for most of the synchronous

buck converter applications .

FEATURES



Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

G E

Green Device Available

H F



Drain

MARKING

Millimeter

REF.

Min.

Max.

Min.

Max.

50N10



Gate

6.35

5.20

2.15

0.45

6.8

2.40

5.40

0.64

6.80

5.50

2.40

0.58

7.5

3.0

6.25

1.20

2.30 REF.

Date Code





0.64

0.50

0.9

0.90

1.1

1.65

0.15

0.58

0.43

PACKAGE INFORMATION



Source

Package

MPQ

Leader Size

TO-252

2.5K

13 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

100

±20

V_GS

T_C=25°C

Continuous Drain Current @V_GS=10V ¹

Pulsed Drain Current ²

I_D

T_C=100°C

I_DM

P_D

100

T_C=25°C

T_A=70°C

Total Power Dissipation ⁴

Single Pulse Avalanche Energy ³

Single Pulse Avalanche Current

E_AS

I_AS

Operating Junction and Storage Temperature Range

T_J, T_STG

-55~150

°C

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient ¹

Maximum Thermal Resistance Junction-Case ¹

R_θJA

R_θJC

62.5

1.4

°C / W

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

19-Oct-2012 Rev. A

Page 1 of 4

12 3 4

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