SSD50P06-15D
61A, -60V, RDS(ON) 17mΩ
P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell
density process.Low RDS(on) assures minimal power loss
and conserves energy, making thisdevice ideal for use in
power management circuitry. Typical applications are
PWMDC-DC converters, power management in portable
and battery-powered products such as computers, printers,
battery charger, telecommunication power system, and
telephones power system.
TO-252(D-Pack)
A
B
FEATURES
C
D
Low RDS(on) provides higher efficiency and extends battery life.
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
G E
Extended VGS range (±25) for battery pack applications.
K
J
H F
N
O
P
M
PACKAGE INFORMATION
Package
MPQ
2.5K
LeaderSize
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
TO-252
13’ inch
A
B
C
D
E
F
6.4
5.20
2.20
0.45
6.8
6.8
5.50
2.40
0.58
7.3
J
K
M
N
O
P
2.30 REF.
0.70
0.50
0.9
0.90
1.1
1.6
0
0.43
0.15
0.58
2.40
5.40
0.8
3.0
6.2
1.20
G
H
Drain
Gate
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
VDS
Ratings
-60
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
Continuous Drain Current 1
Pulsed Drain Current 2
ID @TA=25℃
IDM
61
A
±40
A
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
IS
-30
A
PD @TA=25℃
TJ, TSTG
50
W
°C
Operating Junction and Storage Temperature Range
-55 ~ 175
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient 1
RθJA
RθJC
50
°C / W
°C / W
Maximum Thermal Resistance Junction-Case
3.0
Notes:
1.
2.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
20-Dec-2010 Rev.B
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