Datasheet > SSD9575

SSD9575

更新时间： 2024-09-25 09:05:03

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	638K
描述
P-Channel Enhancement Mode Power Mos.FET

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SSD9575 数据手册

SSD9575

-15A, -60V,RDS(ON)90m

Elektronische Bauelemente

P-Channel Enhancement Mode PowerMos.FET

RoHS Compliant Product

Description

TO-252

The SSD9575 provide the designer with the best combination of

fast switching, ruggerized device device design, low on-resistance

and cost -effectiveness.

The TO-252 is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Features

* Low On-Resistance

* Simple Drive Requirement

* Fast Switching

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

2.80

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.20

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

-60

± 25

-15

-9.5

-45

Gate-Source Voltage

VGS

ID@TC=25^oC

Continuous Drain Current,VGS@10V

^oC

Continuous Drain Current,VGS@10V

ID@TC=100

Pulsed Drain Current¹

IDM

25^oC

Total Power Dissipation

PD@TC=

W/^oC

^oC

Linear Derating Factor

0.29

Operating Junction and Storage Temperature Range

-55~+150

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-c

Ratings

3.5

Unit

C /W

Max.

Thermal Resistance Junction-case

^oC /W

110

Rthj-a

Thermal Resistance Junction-ambient

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Page 1 of 4

01-Jun-2002 Rev. A

12 3 4

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