Datasheet > SSD9435

SSD9435

更新时间： 2024-09-25 09:05:03

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	595K
描述
P-Channel Enhancement Mode Power Mos.FET

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SSD9435 数据手册

SSD9435

-20A, -30V,RDS(ON)50m

Elektronische Bauelemente

P-Channel Enhancement Mode PowerMos.FET

RoHS Compliant Product

Description

TO-252

The SSD9435 utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely efficient

and cost-effectiveness device.

The TO-252 is universally used for commercial-industrial

applications.

Features

* Low Gate Charge

* Simple Drive Requirement

* Fast Switching

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

2.80

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.20

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

-30

± 20

-20

-13

-72

Gate-Source Voltage

VGS

ID@TC=25^oC

Continuous Drain Current

^oC

Continuous Drain Current

ID@TC=100

Pulsed Drain Current¹

IDM

Total Power Dissipation

PD@TC=

25 C

W/^oC

^oC

Linear Derating Factor

0.25

Operating Junction and Storage Temperature Range

-55~+150

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-c

Ratings

4.0

Unit

C /W

Max.

Thermal Resistance Junction-case

^oC /W

110

Rthj-a

Thermal Resistance Junction-ambient

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Any changing of specification will not be informed individual

Page 1 of 4

01-Jun-2002 Rev. A

12 3 4

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