Datasheet > SSD55N03

SSD55N03

更新时间： 2024-11-13 09:05:03

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	589K
描述
N-Channel Enhancement Mode Power Mos.FET

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SSD55N03 数据手册

SSD55N03

55A, 25V,RDS(ON)6mΩ

Elektronische Bauelemente

N-Channel Enhancement Mode PowerMos.FET

RoHS Compliant Product

Description

TO-252

The SSD55N03 provide the designer with the best combination

of fast switching, ruggedized device design, low on-resistance

and cost-effectiveness.

The TO-252 is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Features

* Repetitive Avalanche Rated

* Dynamic dv/dt Rating

* Simple Drive Requirement

* Fast Switching

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

2.80

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.20

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

± 20

Gate-Source Voltage

VGS

ID@TC=25^oC

Continuous Drain Current,VGS@10V

ID@TC=100

Pulsed Drain Current¹

Total Power Dissipation

215

62.5

0.5

IDM

^oC

PD@TC=25

W/^oC

Linear Derating Factor

Single Pulse Avalanche Energy²

EAS

IAR

240

Avalanche Current

^oC

Operating Junction and Storage Temperature Range

-55~+150

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-c

Ratings

Unit

2.0

C /W

Max.

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

110

^oC /W

Rthj-a

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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