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SSD9973 PDF预览

SSD9973

更新时间: 2024-09-25 09:05:03
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
4页 583K
描述
N-Channel EnhancementMode PowerMos.FET

SSD9973 数据手册

 浏览型号SSD9973的Datasheet PDF文件第2页浏览型号SSD9973的Datasheet PDF文件第3页浏览型号SSD9973的Datasheet PDF文件第4页 
SSD9973  
14A, 60V,RDS(ON)80mΩ  
Elektronische Bauelemente  
N-Channel Enhancement Mode PowerMos.FET  
RoHS Compliant Product  
Description  
TO-252  
The SSD9973 provide the designer with the best combination  
of fast switching, ruggedized device design, low on-resistance  
and cost-effectiveness.  
The TO-252 is universally preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Features  
* Low Gate Charge  
* Simple Drive Requirement  
D
Millimeter  
Millimeter  
Min.  
0.50  
2.20  
0.45  
0
0.90  
5.40  
0.80  
REF.  
REF.  
Min.  
Max.  
6.80  
5.50  
7.20  
2.80  
Max.  
0.70  
2.40  
0.55  
0.15  
1.50  
5.80  
1.20  
A
B
C
D
E
F
6.40  
5.20  
6.80  
2.20  
G
H
J
K
L
G
2.30 REF.  
0.70  
0.60  
0.90  
0.90  
M
R
S
S
Absolute Maximum Ratings  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Ratings  
Unit  
V
60  
± 20  
14  
9
Gate-Source Voltage  
VGS  
V
A
ID@TC=25oC  
Continuous Drain Current,VGS@10V  
o
Continuous Drain Current,VGS@10V  
C
ID@TC=100  
A
A
Pulsed Drain Current1  
Total Power Dissipation  
40  
27  
IDM  
oC  
PD@TC=25  
W
W/oC  
oC  
Linear Derating Factor  
0.22  
Operating Junction and Storage Temperature Range  
-55~+150  
Tj, Tstg  
Thermal Data  
Parameter  
Symbol  
Rthj-c  
Ratings  
4.5  
Unit  
o
C /W  
Max.  
Max.  
Thermal Resistance Junction-case  
oC /W  
110  
Rthj-a  
Thermal Resistance Junction-ambient  
http://www.SeCoSGmbH.com/  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 4  

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