Datasheet > SSD80N03_15

SSD80N03_15

更新时间： 2024-09-26 01:22:27

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	402K
描述
N-Ch Enhancement Mode Power MOSFET

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SSD80N03_15 数据手册

SSD80N03

80A , 30V , R_DS(ON)5.5m

Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

TO-252(D-Pack)

The SSD80N03 is the highest performance trench

N-ch MOSFETs with extreme high cell density , which provide

excellent R_DS(ON)and gate charge for most of the synchronous

buck converter applications .

FEATURES

ꢁ

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

G E

Green Device Available

H F

MARKING

Millimeter

REF.

Min.

Max.

Min.

Max.

80N03

ꢀꢀꢀꢀ

6.35

5.20

2.15

0.45

6.8

6.80

5.50

2.40

0.58

7.5

2.30 REF.

Date Code

0.64

0.50

0.9

0.43

0.90

1.1

1.65

0.15

0.58

2.40

5.40

0.64

3.0

6.25

1.20

PACKAGE INFORMATION

Package

MPQ

Leader Size

Drain

TO-252

2.5K

13 inch

Gate

Source

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

V_GS=10V, T_C=25°C

V_GS=10V,T_C=100°C

Continuous Drain Current ¹

I_D

Pulsed Drain Current ²

I_DM

P _D

160

Total Power Dissipation ⁴

T_C=25°C

Linear Derating Factor

0.5

W / °C

Single Pulse Avalanche Energy ³

Single Pulse Avalanche Current

E_AS

I_AS

252

Operating Junction and Storage Temperature Range

T_J, T_STG

-55~150

°C

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient ¹

Maximum Thermal Resistance Junction-Case ¹

R_θJA

R_θJC

°C / W

2.1

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

09-Jan-2015 Rev. A

Page 1 of 4

12 3 4

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