SSD60N04-12D
N-Ch Enhancement Mode Power MOSFET
53A, 40V, RDS(ON) 12mΩ
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable
And battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
A
B
C
D
High performance trench technology.
G E
PRODUCT SUMMARY
PRODUCT SUMMARY
K
J
H F
N
O
P
ID(A)
53
49
VDS(V)
40
RDS(on) m(
12@VGS= 10V
14@VGS= 4.5V
Drain
M
Gate
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
A
B
C
D
E
F
6.4
5.20
2.20
0.45
6.8
6.8
5.50
2.40
0.58
7.3
J
K
M
N
O
P
2.30 REF.
0.70
0.50
0.9
0.90
1.1
1.6
Source
0
0.43
0.15
0.58
2.40
5.40
0.8
3.0
6.2
1.20
G
H
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
VDS
RATINGS
UNIT
Drain-Source Voltage
40
±20
V
V
Gate-Source Voltage
VGS
Continuous Drain Current a
Pulsed Drain Current b
ID @TA=25℃
IDM
53
A
40
A
Continuous Source Current (Diode Conduction) a
Total Power Dissipation a
IS
30
A
PD @TA=25℃
TJ, TSTG
50
W
°C
Operating Junction and Storage Temperature Range
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
RθJC
50
°C / W
°C / W
Maximum Thermal Resistance Junction-Case
3.0
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jun-2010 Rev.A
Page 1 of 2